Abstract

Valley hall effect is one of most important phenomenon in 2D material towards valleytronic devices. The demonstration of valley hall effect for electrons (Science 344, 1489-1492 (2014)) and excitons (Nat Mater 16, 1193 (2017)) have triggered great interest in the community. However, they are required to operate only at cryo-temperature. Interlayer excitons bring the possibility to act as better devices due to their much longer valley lifetime and therefore longer transport distance as compared to monolayers [1]. In this talk, Dr. Gao will talk about valley hall effect for electron/hole as well as interlayer excitons in heterostructures in MoS2/WSe2. The working condition in room temperature together with possibility to electrically control their movement may render interesting valleytronic devices in near future.


References

  1. Chongyun Jiang, Weigao Xu, Abdullah Rasmita, Zumeng Huang, Ke Li, Qihua Xiong, Wei-bo Gao Microsecond dark-exciton valley polarization memory in 2D heterostructures Nature Communications 9, 753 (2018).

Speaker’s Bio

Dr. Weibo Gao received his PhD in quantum physics from University of Science and Technology in 2010 under the guidance of Prof. Jianwei Pan. Then he worked in ETH, Zurich as a postdoc from 2010 to 2014 with Prof. Atac Imamoglu, in the research field of solid state quantum physics. They have demonstrated quantum dot spin‐photon entanglement and quantum teleportation for quantum dot spins. From 2014, Dr. Gao moved to Nanyang technological University as a Nanyang assistant professor (NRF fellowship). Therein, they work on color centers for quantum computation as well as 2D materials for light-matter interaction. His research interest likes in quantum optics, valley physics, as well as magnetic materials.